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FMMTA06TC
NPN silicon bipolar junction transistor for surface mount applications. Features 80V collector-emitter breakdown voltage and 500mA continuous collector current. Offers a 250mV collector-emitter saturation voltage and a 100MHz gain bandwidth product. Packag
DIODES

FMMTA06TC Datasheet

FMMTA06TC - NPN silicon bipolar junction transistor for surface mount applications. Features 80V collector-emitter breakdown voltage and 500mA continuous collector current. Offers a 250mV collector-emitter saturation voltage and a 100MHz gain bandwidth product. Packag by DIODES

FMMTA06TC datasheet - NPN silicon bipolar junction transistor for surface mount applications. Features 80V collector-emitter breakdown voltage and 500mA continuous collector current. Offers a 250mV collector-emitter saturation voltage and a 100MHz gain bandwidth product. Packag



Название/Part No:
FMMTA06TC

Описание/Description:
NPN silicon bipolar junction transistor for surface mount applications. Features 80V collector-emitter breakdown voltage and 500mA continuous collector current. Offers a 250mV collector-emitter saturation voltage and a 100MHz gain bandwidth product. Packag

Производитель/Maker:
DIODES (DIODES)

Ссылка на datasheet:
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