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STGD7NB120ST4
The STGD7NB120ST4 is a single insulated gate bipolar transistor with a maximum collector-emitter voltage of 1200V and a maximum continuous collector current of 10A. It has a typical collector-emitter saturation voltage of 1.7V and a maximum power dissipati
Stmicroelectronics

STGD7NB120ST4 Datasheet

STGD7NB120ST4 - The STGD7NB120ST4 is a single insulated gate bipolar transistor with a maximum collector-emitter voltage of 1200V and a maximum continuous collector current of 10A. It has a typical collector-emitter saturation voltage of 1.7V and a maximum power dissipati by STMICROELECTRONICS

STGD7NB120ST4 datasheet - The STGD7NB120ST4 is a single insulated gate bipolar transistor with a maximum collector-emitter voltage of 1200V and a maximum continuous collector current of 10A. It has a typical collector-emitter saturation voltage of 1.7V and a maximum power dissipati



Название/Part No:
STGD7NB120ST4

Описание/Description:
The STGD7NB120ST4 is a single insulated gate bipolar transistor with a maximum collector-emitter voltage of 1200V and a maximum continuous collector current of 10A. It has a typical collector-emitter saturation voltage of 1.7V and a maximum power dissipati

Производитель/Maker:
Stmicroelectronics (STMICROELECTRONICS)

Ссылка на datasheet:
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