Определи сначала тип корпуса
5B
CH601H-70APT Si-diode SBD: 70V, 100mA; Vf«0.77V(10mA) SOD-323
5B
MA2X707 Si-diode SBD, UHF-mbc, 5V, 100mA, Vf‹0 .25V(2mA): 0.85pF SOD-123
5B
MM1Z10 Z-dode 10V±5%: lzt=5mA: Za=30Q 500mW SOD-123
5B
MMSZ10 Z-dode 10V±5%: lzt=5mA: Za=20Q 500 mW SOD-123
5B
TCMM5Z6V8 Z-dode 6A.7,2 V, lzt=5mA: Za=15a 200mW SOD-523
T2
BAV19WS Si-diode Sw, 100V, 200mA, Vf‹1.25V(200mA),‹50ns SOD-323
T2
BAV20W Si-diode Sw, 150V, 200mA, Vf‹1.25V(200nV\),‹50ns SOD-123
T2
BAV20WS Sf-diode Sw. 150V, 200mA, Vf‹1.25V(200mA),‹50ns SOD-323
T2 BZX384-C10 Z-dode 10V±5%, lzt=5mA, Za=8u 200m W SOD-323
T2 FS2B Si-diode GP, Rectifier, 100V.3A.4ps DO-214AB
T2 FS3B St-diode Rectife r, 100V, 3A, Vf‹1.15V(3A) DO-214AB
T2 MM3Z2V4S Z-dbde 2.43.2,63V, 5mA, Zzt=100(}, 200mW SOD-323
T2 MMSZ2V7 Z-diods 2.7V±5%,Z2=100a,500mW SOD-123
T2 1PS79SB17 Si-diode Schottky,Sw;4V,30mAVf‹0.6V(10mA),‹0.65pF SOD523
T2 BAV19W Si-diode Sw, 100V, 200mA, Vf‹1.25V(200mA),‹ 50ns SOD-123
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